Interfaces in Spintronics
نویسندگان
چکیده
The term “spintronics” was coined in 1996 by S. A. Wolf during an informal meeting at the Defense Advanced Research Projects Agency (DARPA), while trying to name a research program focused developing spin transport-based electronic devices.[1] As matter of fact, appearance spin-based devices is dated several years earlier, with first transport experiments most likely being reported R. Meservey and P. M. Tedrow early 70s. In this work, polarization 3d ferromagnets measured tunneling into superconductors.[2, 3] Without doubt, impactful spintronics (even if still not that time) connected late 80s on giant magnetoresistance (GMR), as independently conducted groups Fert[4] Grünberg,[5] who were awarded Nobel prize Physics 2007.[6] Their laid foundations for revolution data storage, providing routes boost storage capacity hard drives orders magnitudes, from <1 Gbit/in2 ∼600 Gbit/in2,[7] also thanks development carried out IBM group Parkin.[8] There practically no spintronic device which interfaces between materials different chemical, structural, or magnetic properties do play crucial role driving functionalities, illustrated following examples. (i) performance tunnel junction strongly dependent quality process ferromagnetic layers, largely determined its interfaces’ properties. (ii) Spin-charge interconversion phenomena resulting accumulation heterostructures composed heavy metals (or topological matter) are large extent interfacial processes. (iii) Interfacial Dzyaloshinskii-Moryia interaction creation manipulation skyrmions ultrathin layers. (iv) Systems based interface superconductors insulators considered be possible observe elusive Majorana fermions. arena flourishing more than ever. While magnetoresistive have been production now, plethora new concepts just entered game, offering potential make significant leap forward. This special issue “Interfaces Spintronics” Materials Interfaces collection reviews, perspectives, original papers, focus intimate connection their target application devices. content ranges novel (two-dimensional ferromagnets, insulators, Weyl semimetals, Heusler alloys emerging ferri- antiferromagnetic compounds) inclusion mature such junctions. A number papers address through molecules, magneto-ionic magneto-electric effects, excitation light. comprehensive characterization wide range analytical tools (such spin-orbit torque, terahertz spectroscopy, resonance Mössbauer spectroscopy) subject contributions. Thanks strong interdisciplinarity collected manuscripts, could serve basis establish fruitful connections among all over world. More ever, will keep playing key functionalities future devices, point device. Sharing complementary expertise fundamental present open questions field. Roberto Mantovan obtained his PhD physics 2006. Since 2009 he Scientist CNR-IMM, Unit Agrate Brianza (Italy), involved national international projects within topics spintronics. His main activities currently concern matter, atomic-scale structural/chemical/magnetic bulk materials, thin films, means magnetotransport, films growth mainly chemical methods. 2008, H2020 Skytop project, coordinates methods synthesize large-area functional characterization, integration layers toward applications. Tobias Kampfrath degree Freie Universität Berlin (Germany) 2006 then worked postdoctoral fellow AMOLF Amsterdam (Netherlands). 2010, became head Terahertz Group Fritz Haber Institute Max Planck Society (Germany). 2017, full professor Department Berlin, working dynamics condensed particular nanostructures materials. Chiara Ciccarelli assistant Cavendish Laboratory Cambridge. She received her Cambridge 2012 2016 held Junior Fellowship Gonville Caius College (Cambridge). Royal University Fellow since October 2017. Her focusses spin-charge conversion inversion-asymmetric structures, dc down picosecond timescales. has given 30 invited talks conferences past five she participating networks including European COST action Innovative Training Network theme ultrafast magnetism.
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ژورنال
عنوان ژورنال: Advanced Materials Interfaces
سال: 2022
ISSN: ['2196-7350']
DOI: https://doi.org/10.1002/admi.202202307